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2016/10/18 (Tuesday)

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Setup: DIB1/3/4 → 3.2 MHz filters → cables → DCRC55(1)/33(2)/50(3)
0855 Tower/MC/Coldplate = 35.4/36.3/224 mK, Still = 1.40 K / 85 μbar, G1/G2 = 155/155 mbar, 1K Pot = 1.71 K / 32.0 mbar. MB = 30.8%
Boiloff rate: this is a little worse than slow-mode but much closer to slow- than fast-mode
0900 Fill LN2 cold trap bath
1100 Studying DIB4pD - this is TES0 and seems to have a sharp transition. This channel was railed but adjusting its SQUID settings helped:
New SQUID settings
Channel SQUID bias Lockpoint
DIB4pD -51.3 -4.9
1200 Sending a 400 Hz 12 mVpp test signal to DIB4pD and set its Driver Gain to x8. Change QET bias and record peak-to-peak output voltage:
DIB4pD QET bias scan with test signal
QET Bias [μA] Output [mVpp] Phase Notes
0 167 in
400 46 in
350 39 in
300 in no visible output, <4 mVpp
250 41 in
200 161 in
240 40 in
230 13 out
220 167 out
210 233 out
200 162 in
230 13 out 15 kHz sinusoidal oscillations
228 24 out
226 41 out
224 64 out
222 105 out
221 134 out
220 140 out oscillations
219 out strong oscillations
218 out very strong oscillations
215 193 out weaker oscillations
212 220 out
210 230 out
208 250 out
206 380 out
204 520 out
202 165 in
“out” means that output is 180 deg out of phase with test signal
Rparasitic = 9.77 mΩ

Noah says the oscillations are expected and occur when the TES resistance is too small (less than shunt - this means the TES is current biased and therefore unstable)

QET bias 230 μA
QET bias 230 μA
QET bias 219 μA
QET bias 218 μA
QET bias 217 μA
1300 Initial attempt to use above complex impedance data to calculate Rtes in transition for DIB4pD seem to not make sense. Attempting to do this with “mini-IbIs” gives reasonable looking results. The two high biases used were 300 and 350 μA, and a driver gain of x2 was chosen (at x8 it was impossible to keep from railing at the various extremes). The normal state resistance comes out to Rtes = 81 mΩ.
We found some errors in our first attempt to use this data to get resistances in the transition state. See this page on calculating TES resistances using a test signal for info on how to do the calculation.
Mini-Ibis resistance results for DIB4pD in transition:
At some point Noah performed complex impedance measurements on DIB4pD. He applied a 12 mV test signal.
DIB4pD (TES0) complex impedance measurement
Test signal frequency [Hz] Output signal [mVpp]
100 15.7
200 15.7
500 15.7
1000 15.1
2000 14.5
5000 13.6
10000 13.7
20000 14
25000 11.5
30000 8.2
35000 5
40000 3.5
50000 2
60000 1.5
100000 1
500000 0.1
Test signal amplitude: 12 mVpp
Driver gain setting: x2
QET bias: 200 μA (probably)
1335 Commence LHe transfer (21.9%).
1422 End LHe transfer (89.5%).
1434 Release pressure from main bath.
1510 Release pressure from main bath.
1705 Fill LN2 cold trap full.
1745 Place Cf source on side of fridge at detector height.

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