| 1400 | Take S104 to wirebonding lab to try to repair more wirebonds. Worked on DIB3pA, which connects to Side 1. This is a very long path to the pads. I succeeded in getting the second DIB pad connected but the first seemed just to long, wire would break before I got all the way to the detector pad. Decided to use the hopscotch trick, did surgery on one QET, scraping away the two ends with an Exacto blade to disconnect it from its TES. Then bonded one wire from DIB to QET, then another from QET to detector pad. |
| | Final wirebonder settings: power = 500/490, bond time = 40/30, rise/drop = 60/30. |
| | Note that increasing rise/drop may have helped keep the wire from breaking on the way, not sure…. seems I did pretty long bonds in the past with the older settings of 50/26. |
| | NOTE: if the surgery wasn't complete, we may have shorted two channels together: DIB3pA=Side1pF to DIB4pC=Side1pA. This will be difficult to verify until the detector is cold, I guess 4K - then there should be high interchannel resistances, since the Si will have high resistivity. |