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2018/03/05 (Monday)

Previous Day

Status: LN2 cap-off transfer yesterday. Waiting for LHe - there will be some today.
0930 MC(Cernox) = 76.9 K, Sorb = 118.2 K, IVC = 2.2 mbar, G1 (fridge) = 605 mbar
0930 Pump out IVC
0935 Fill LN2 cold trap bath
0950 Start pumping on IVC with Leak Detector. Background = 2700 pbarL/s.
0955 Begin blowing out LN2 into bomb Dewar. G3 (main bath) = 454 mbar.
0955 Check the short from DIB2qI FET gate to chassis. Qi_feedback-chassis = 10 nS. Chassis-qI_drain or source = 25 nS. These are a little worse than yesterday (7.5/15 yesterday). So leak is around 40 MOHm.
1035 G3 falling, to around 185 mbar, probably almost finished removing LN2
1035 LD signal rose as soon as the LN2 was all removed, when G3 fell. LD → 140,000 pbarL/s = 1.4e-4 mbarL/s. Maybe this is just from He gas at top of fridge.
1045 Stop pressurizing main bath, LN2 blowout finished.
1055 Pump on main bath with scroll pump.
LD signal starts falling when we start pumping on main bath. This could be a concern - could be that the bottom IVC seal has a leak now that it's cold.
1100 LD = 4500 pbarL/s = 4.5e-6mbarL/s and continues to fall
1101 P2 < 1 mbar. close V1A, V4A. Isolate the scroll pump.
1105 LD = 1200 pbarL/s
1105 Fill main bath with He gas to 474 mbar above 1atm on G3. LD signal begins to rise. LD > 100,000 pbarL/s. Also let some He into 1K Pot through its speedivalve.
1100 LD = 200,000 pbarL/s = 2e-4 mbarL/s and flat.
This is a pretty bad leak. Not sure whether this will be a problem when cold.
1115 Turbo pump = 25 nbar pumping on IVC. Stop pumping, Let 63 μbar He exchange gas into IVC.
1135 Pump out 1K Pot with scroll pump. I know I pressurized it earlier, but lately we've been leaving it at vacuum during the LHe fill, and that seems to work well. Harder to start it I think when it's full of He.
1140 MC(Cernox) = 77.0 K, Sorb = 125.9 K, IVC = 74 μbar, G1(fridge) = 598 mbar.
1145 Begin initial LHe transfer
we'll monitor changes in the crystal resistance as we cool to 4K by measuring through a qBias line to the Side 2 electrode (measuring through the 40 MOhm bias resistor).
1155 MC(Cernox) = 77.0 K, Sorb = 127.7 K, IVC = 74 μbar, G1(fridge) = 597 mbar. DIB1 qIbias-QET D = 25.5 nS
1205 MC(Cernox) = 76.9 K, Sorb = 126.8 K, IVC = 54 μbar, G1(fridge) = 596 mbar. DIB1 qIbias-QET D = 25.4 nS
1220 MC(Cernox) = 74.6 K, Sorb = 106.0 K, IVC = 12 μbar, G1(fridge) = 578 mbar. DIB1 qIbias-QET D = 25.4 nS
1235 MC(Cernox) = 63.0 K, Sorb = 59.9 K, IVC = 19 μbar, G1(fridge) = 531 mbar. DIB1 qIbias-QET D = 25.4 nS
1245 1K Pot = 7.0 K
1252 MC(Cernox) = 49.5 K, Sorb = 8.1 K, IVC = 25 μbar, G1(fridge) = 472 mbar. DIB1 qIbias-QET D = 25.4 nS
1305 MC(Cernox) = 40.5 K, Sorb = 7.6 K, IVC = 30 μbar, G1(fridge) = 480 mbar. DIB1 qIbias-QET D = 25.4 nS
note IVC pressure is rising a little, I guess that's from the cold leak.
1320 MC(Cernox) = 29.2 K, Sorb = 6.6 K, IVC = 34 μbar, G1(fridge) = 462 mbar. DIB1 qIbias-QET D = 25.4 nS
1335 MC(Cernox) = 17.4 K, Sorb = 6.0 K, 1K Pot = 4.76 K, IVC = 34 μbar, G1(fridge) = 457 mbar, Main bath = 51.9%. DIB1 qIbias-QET D = 25.3 nS
1340 MC hits 10 K, start pumping out IVC with turbo pump
1340 MC(Cernox) = 10.1 K, Sorb = 5.6 K, 1K Pot = 4.43 K, G1(fridge) = 450 mbar, Main bath = 58.2%. DIB1 qIbias-QET D = 24.8 nS
1342 Crystal conductance drops fast: MC(Cernox) = 4.8 K, DIB1 qIbias-QET D = 4 nS
1344 … MC(Cernox) = 4.3 K, DIB1 qIbias-QET D = 1.23 nS
1345 MC(H35) = 4.29 K, Sorb = 5.4 K, 1K Pot = 4.32 K, G1(fridge) = 445 mbar, Main bath = 63.1%. DIB1 qIbias-QET D = 1.07 nS
1347 DIB1 qIbias-qObias = 9.38 nS (was 13 nS)
1350 Tower = 4.27 K, Sorb = 5.4 K, 1K Pot = 4.33 K, G1(fridge) = 444 mbar, Main bath = 69.6%. DIB1 qIbias-QET D = 1.04 nS
1400 Tower = 4.29 K, Sorb = 5.4 K, 1K Pot = 4.32 K, G1(fridge) = 452 mbar, Main bath = 65.7%. DIB1 qIbias-QET D = 1.17 nS
bath level went down, probably because transfer stick not pushed down far enough in Dewar. Push down transfer stick.
1410 Tower = 4.29 K, Sorb = 5.5 K, 1K Pot = 4.31 K, G1(fridge) = 440 mbar, Main bath = 76.3%. DIB1 qIbias-QET D = 1.04 nS
1420 Tower = 4.30 K, Sorb = 5.4 K, 1K Pot = 4.24 K, G1(fridge) = 454 mbar, Main bath = 76.1%.
1425 Tower = 4.30 K, Sorb = 5.4 K, 1K Pot = 4.24 K, G1(fridge) = 459 mbar, Main bath = 71.3%.
1430 End LHe transfer @ Main Bath = 66.2%
1445 Check the short from DIB2qI FET gate to chassis. Qi_feedback-chassis = 4-6 nS, kinda unstable. Chassis-qI_drain or source = 21 nS. Slightly better than this morning. Leak is around 45 MOHm.
1450 Plug DIB1/2 into DCRC50(3)/DCRC55(1). Start MIDAS. Adjust some ODB settings.
1515 See some pulses. Tried to zoom in to 0.8 ms window - then for some reason the trigger threshold settings were acting weird, had to set them very high, previously they were behaving OK.
1520 Restart MIDAS programs. Now triggering seems to work. With 5V bias (from DCRC, all 4 channels) see pulses on DIB1qO with trigger threshold = 80
See pulses on the 3 other channels too at trigger time while triggering on DIB1qO. So we see crosstalk and verify that timing link works.
1530 Try bias of 10 V. See decent pulses in all channels. Trigger thresholds of 100 seem ok for all channels except DIB1qI, which needs a higher threshold, maybe 400.
1540 Try turning on the LEDs. No noticeable change in temperature. But looking at the charge channels it's clear that LED pulses are occurring. We'll let it bake overnight.
1550 Fill LN2 cold trap bath
1555 Set charge biases to 0 V (almost forgot)

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