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2016/09/20 (Tuesday)

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DCRC1 and DCRC3 powered on and connected through HV setup EBoxDIB 2/3 → 3.2 MHz filters → Cables → remapping board I/remapping board II → HVside2board “DIB1”/“DIB2” → DCRC55(1)/50(3). Remapping boards have all possible lines switched off. .
Baked using IR LEDs for 7 hours last night. Tower was at 0.55 K until 07:12 then fell to base.
0906 Tower/MC/Coldplate = 94/60/330 mK, Still = 0.89 K / 75 μbar, G1/G2 = 150/138 mbar, 1K Pot = 1.48 K / 3.2 mbar. MB = 67.4%
Boiloff rate: OK, closer to “slow mode” than “fast mode”. Yesterday released MB pressure at 13,35,60 minutes after 91.6% fill
1K Pot has been pretty stable.
0910 Fill LN2 cold trap full.
0959 With HV board grounded, manually flash with IR LEDs for 30s, then begin 10 minute cooldown before manually taking 10V HV data. Tower temp reaches 300mK before cooling.
1009 Unground the detector, turn on power supply, and slowly apply 10V to the crystal through the HV board over the course of ~10s. Manually start 30min background data series at HV = 10V with FG=5, OG=8, triggering on DCRC1 Qo (threshold 7850) with 1000 initial randoms, 1000 ending randoms. Leakage current measured at 1.6mV.
1041 Cease data run. After end randoms finish, lower HV to 0V, then ground the detector. Manually flash with IR LEDs for 30s, then begin 10 minute cooldown before manually taking 10V HV data.
1058 Unground the detector, turn on power supply, and slowly apply 10V to the crystal through the HV board over the course of ~10s. Manually start 30min background data series at HV = 10V with FG=5, OG=8, triggering on DCRC1 Qo (threshold 7850) with 1000 initial randoms, 1000 ending randoms.
1129 Cease data run.
Before flashing, let's check the pulses to see what we should lower the trigger threshold to. JK never mind, we gotta flash bc we can't see nuthin.
1135 Ground detector, flash for 30s, and then apply 10V and look at pulses.
1140 Adjust DIB1 Qo trigger threshold to 300ADC Bins (down from ~7800). Ground detector and flash for 30s, and cool down for 10min.
1155 Unground the detector, turn on power supply, and slowly apply 10V to the crystal through the HV board over the course of ~10s. Manually start 30min background data series at HV = 10V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 300 ADC Bin trigger threshold on DIB1 Qo.
1227 Cease data run. Ground detector, flash for 30s, and then apply 10V and look at pulses.
1243 Manually start 30min background data series at HV = 10V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 300 ADC Bin trigger threshold on DIB1 Qo.
1318 Set HV to 0V and then ground it. Commence 20 minute UV bake (-0.8mA).
1414 Manually start 20min background data series at HV = 10V, DCRC1/Readout=-10V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 150 ADC Bin trigger threshold on DIB1 Qo.
1439 Set HV to 0V and then ground it. Commence 30 second UV flash followed by 10 minute cooldown.
1452 Manually start 20min background data series at HV = 10V, DCRC1/Readout=-10V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 150 ADC Bin trigger threshold on DIB1 Qo.
1513 Cease data run. Ground detector, bake for 20min using IR LEDs.
1632 We may be seeing the 60keV line degrading in time. Here's an animation of it in 2 minute bins.

However, we currently just use the “Qmax” RQ, which probably does a poor job of characterizing the currently inverted pulses.

Qmax Versus Time
1636 Manually start 20min background data series at HV = -10V, DCRC1/Readout=10V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 150 ADC Bin trigger threshold on DIB1 Qo.
1655 Cease data run. Ground detector, flash with IR LEDs for 30s, then cool down for 10 minutes.
1712 Manually start 20min background data series at HV = -10V, DCRC1/Readout=10V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 150 ADC Bin trigger threshold on DIB1 Qo.
1733 Cease data run. Ground detector, flash with IR LEDs for 30s, then cool down for 10 minutes.
1735 Fill LN2 cold trap full.
1747 Manually start 20min background data series at HV = -10V, DCRC1/Readout=10V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 150 ADC Bin trigger threshold on DIB1 Qo.
1816 Using flashandtake.py start 30 second UV flash/ 10 min cooldown / 15min background data series at HV = -0V, DCRC1/Readout=12V with FG=5, OG=8, with 1000 initial randoms, 1000 ending randoms with 150 ADC Bin trigger threshold on DIB1 Qo. Keep taking this data for 4 hours (9 series).
2213 Commence 9 hour UV bake.

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