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2016/08/25 (Thursday)

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Setup: iZIP mode, DIB1/2/3 → 3.2 MHz filters → cables → DCRC55(1)/33(2)/50(3), Tower has been cooled below Al transition with mu-metal shield 37.8cm below standard position
DCRCs powered overnight. Pumping on IVC with turbo pump overnight. Baked detector for 12 hours overnight, Tower at 0.4 K until 04:53.
DCRC3 phonon channels are set for HV setup, should revert these before running in iZIP mode
0840 Tower/MC/Coldplate = 38.8/37.0(?)/155 mK, Still = 1.33 K / 85 μbar, G1/G2 = 185/170 mbar, 1K Pot = 1.52 K / 4.0 mbar, MB = 42.6%.
Boiloff rate: good
0845 Fill LN2 cold trap bath.
0850 Close turbo pump valve so that we are no longer pumping on IVC
This is to maybe accelerate He buildup in IVC to see whether HV properties are affected
0855 IVC = 5.4 nbar
0910 Turn off trigger, tower, and DCRC programs on MIDAS, disconnect telnet DCRC sessions, unpower DCRCs.
0915 Set up HV mode, DIB1/2/3 → 3.2 MHz filters → nothing/disconnector board/remapping board → HVside2board → DCRC55(1)/50(3). Disconnector board has all charge lines disconnected.
0915 Power up DCRC1&3 and initiate telnet sessions, disable DCRC2 in ODB.
0915 Tower stable at 38.1 mK
0916 Zapping squids.
0945 Begin more breakdown tests. We'll use DCRC1pC to monitor breakdown. Define a baseline shift of >= 0.2 V as breakdown. Use overshooting: increase bias until pulses disappear, wait one minute, then reduce bias until baseline shift < 0.2 V.
0950 IVC = 7.4 nbar
1000 DCRC1pC baseline = -0.752, so breakdown condition will be baseline >= -0.55 V.
1010 Increase HV to 34.6 V (Vleak 48.3 mV): pulses disappear. After a minute pulses reappear with high noise, baseline 0.3 V.
Attempt to lower bias until baseline below -0.55. But we went lower than necessary, after a minute pulses were very clean… repeat…
At HV = 32.0 V, Vleak = 42.3 mV, after 1 minute, baseline = -0.64 (shift = 0.11) noise low.
Breakdown limit: Vcrystal = +13.4 V
1030 Increase HV to -28 V, Vleak = -39 V: pulses disappear.
Reduce to -20 V, -25.5 mV. Baseline = -0.69 V, noise very low.
Breakdown limit: -8.8 V
1031 Over the last ~10 minutes tower temp has risen from 38mK to 40mK. Charge traces have some uncharacteristic noise.
1032 Reduce bias to 0V, charge noise and tower temp unchanged. Still at 0V, change bias polarity from negative→positive→negative by switching banana plugs at HV source back and forth.
1032 Charge noise seems fixed, traces look reasonable, tower temp falls to 39mK.
1054 Increase bias to -30V. DIB1PC completely gone, QI looks good still. Tower = 38.4mK.
1105 Phonon pulses slowly returning with lots of noise. Attempt to quickly de-neutralize detector by flashing while biased. Use ODB to turn on LEDs for ~2sec.
1108 Tower temp peaks at 160mK.
1120 Tower temp = 38.9mK, Phonon pulses return, but still have breakdown noise as before. V_leak=-37.2mV. Flashing seems to have done nothing…
1127 Begin warm up. Close V6.
1135 V6 closed. Close V13B and turn off He3 pump. Turn on MC Heater to 1.0mW.
1145 Lower mu-metal shield to 27.7 cm below standard position
1155 Tower jumps from 1.1 K → 3.1 K, IVC jumps to 250 nbar. G1 bottoms out at 30 mbar and begins to rise
1200 Tower = 3.4 K, IVC = 300 nbar. Open turbo pump valve to pump on IVC again. Turn off MC heater.
1210 G1 peaks at 150 mbar and starts to fall. Tower falling, currently 3.0 K
1230 Tower temp = 2.3K, G1 = 65mbar. Turn on He3 pump and open V13B.
lunch break…
1400 V6 = 13.8%. Still pressure falls into readable range. G1/G2 = 180 mbar. Tower = 1.4 K.
1455 Open V6 all the way.
1514 Commence LHe transfer (33.6%).
1630 End LHe transfer(84.7%).
1640 Tower = 36.6 mK. Note that the DCRCs were off during the cooldown process. G1/G2 = 175/155 mbar, 1K Pot = 1.50 K / 5.0 mbar, Still = 85 μbar.
Detector has been cooled below Al transition temperature with mu-metal shield 27.7 cm below standard position
1640 Raise mu-metal shield to standard position
1642 Return to iZip setup: iZIP mode, DIB1/2/3 → 3.2 MHz filters → cables → DCRC55(1)/33(2)/50(3)
1644 Power on DCRCs. Set up timing link.
1646 On ODB, enable DCRC2 and restore DCRC3 phonon settings to iZip values from HV mode values.
channel lockpoint SQ bias QET bias
DCRC3B -3.72 -81.2 107
DCRC3C -1.7 -70.0 86
DCRC3D -4.5 -82.6 130
1651 Tower = 37.7mK. Zapping squids.
1728 Release pressure from main bath.
1752 DIB1,3 Phonons look good. Everything (Q&P) on DIB2 super railed. Power cycle DCRC2.
1752 DIB2 looks better, except DIB2PB, which looks sick totally rad ill.
1757 Fill LN2 cold trap full.
1805 Start 12-hour bake.

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