Previous Day (Run 57)
| USD1 wirebonding |
| 0840 | Bring USD1 to wirebonding lab |
| | For LED wirebonds, bond DIB pad → LED, use 475-485/475 bond power, 40/30 bond times, loop height 50, drop 10 |
| 0910 | Wirebond LED on DIB2 side1 |
| 0920 | Wirebond LED on DIB1 side2 |
| | For ground-side wirebonds, bond DIB pad → electrode, use 480/475 bond power, 40/30 bond times, loop height 50, drop 20 |
| 0925 | Bond DIB1pin7 (pD return) to side2 ground electrode. Two bonds. |
| 0935 | Remove bonds from DIB1pin3 and DIB1pin5 to side2 ground electrode. |
USD1 electrical checkout
| USD1 pinout map |
| DIB1qO | DIB1qI | DIB2qO | DIB2qI | DIB1pin7 |
| q1 | q3 | q2 | q4 | g |
| Charge channels are numbered outer-to-inner |
| A “1” is scratched onto housing above DIB1 (a little hard to see) |
| DIB1 is the DIB nearest to the housing serial number |
| Detector | USD1 | DIB | 1 | |
| | | date/who: | 2015-05-23 | MF NM |
| +lead | - lead | signal | typical | measured |
| 9 | chassis | LED1 Rforward | 8 to 9 MΩ | 785 kΩ |
| 9 | chassis | LED1 Vforward | 1.0 to 1.1 V | 1.06 V |
| chassis | 9 | LED1 Rreverse | <1 nS | <0.1 nS |
| 10 | chassis | LED2 Rforward | 8 to 9 MΩ | 783 kΩ |
| 10 | chassis | LED2 Vforward | 1.0 to 1.1 V | 1.06 V |
| chassis | 10 | LED2 Rreverse | <1 nS | 1 nS |
| Detector | USD1 | DIB | 2 | |
| | | date/who: | 2015-05-18 | DS AK |
| +lead | - lead | signal | typical | measured |
| 9 | chassis | LED1 Rforward | 8 to 9 MΩ | 763 kΩ |
| 9 | chassis | LED1 Vforward | 1.0 to 1.1 V | 1.060 V |
| chassis | 9 | LED1 Rreverse | <1 nS | 1 nS |
| 10 | chassis | LED2 Rforward | 8 to 9 MΩ | 783 kΩ |
| 10 | chassis | LED2 Vforward | 1.0 to 1.1 V | 1.060 V |
| chassis | 10 | LED2 Rreverse | <1 nS | 0.2 nS |
| | As done on May 3rd, perform the following cross-channel resistance measurements. Marked DIB1 with piece of kapton tape, so it's more easily identified. |
| | q1 | q2 | q3 | q4 | g | chassis |
| q1 | - | 21.5 | 49.7 | 49.7 | 14.8 | open |
| q2 | - | - | 31.6 | 43.6 | 11.3 | open |
| q3 | - | - | - | 58.9 | 25.3 | open |
| q4 | - | - | - | - | 34.7 | open |
| g | - | - | - | - | - | open |
resistances between four charge channels
and ground connection on opposite side |
Side coax checkouts
As seen in the tower checkouts it looks like we blew two of our coupling capacitors during the last run. qI coupling capacitor reads too-high conductance on the side coaxes on both DIB1 and DIB2. (Reminder to self - the outermost charge channel on the DIB, pin 12, is qI.)
| Side coax | ZB-4-4 |
| | date: | 2015-05-23 | who: | MF NM |
| +lead | - lead | signal | typical | measured |
| D11 | T11 | Qo Rbias | 25 nS | 26 nS |
| T12 | T13 | Qo Rfeedback | 25 nS | 26 nS |
| D11 | T12 | Qo C coupling | <1 nS | 0.2 nS |
| D12 | T14 | Qi Rbias | 25 nS | 27 nS |
| T15 | T16 | Qi Rfeedback | 25 nS | 26 nS |
| D12 | T15 | Qi C coupling | <1 nS | 36 nS |
| Side coax | ZB1-4-6 |
| | date: | 2015-05-23 | who: | MF NM |
| +lead | - lead | signal | typical | measured |
| D11 | T11 | Qo Rbias | 25 nS | 26 nS |
| T12 | T13 | Qo Rfeedback | 25 nS | 26 nS |
| D11 | T12 | Qo C coupling | <1 nS | 0.2 nS |
| D12 | T14 | Qi Rbias | 25 nS | 25 nS |
| T15 | T16 | Qi Rfeedback | 25 nS | 26 nS |
| D12 | T15 | Qi C coupling | <1 nS | 8.35 kΩ |
| Side coax | ZB1-4-8 |
| | date: | 2015-05-23 | who: | MF NM |
| +lead | - lead | signal | typical | measured |
| D11 | T11 | Qo Rbias | 25 nS | 26 nS |
| T12 | T13 | Qo Rfeedback | 25 nS | 26 nS |
| D11 | T12 | Qo C coupling | <1 nS | 0.9 nS |
| D12 | T14 | Qi Rbias | 25 nS | 27 nS |
| T15 | T16 | Qi Rfeedback | 25 nS | 26 nS |
| D12 | T15 | Qi C coupling | <1 nS | 0.95 nS |
We checked the new side coaxes that came from Soudan. But there are none the same length as the position-2 coaxes we have been using lately, because Soudan iZIPs are thinner (housing thickness about 1 1/16“ versus 1 3/8”). We still have a full set of three position-1 side coaxes. A quick check shows their capacitors ate all good. There are also two more position-1 side coaxes from Soudan which should be the same length (same DIB height along detector housing face) but it looks like they might be slightly different.
CDMSII (1 cm) side coax pin displacement heights (inches)
from mechanical drawings |
| position 1 | 4.641 | 4 10.3/16 in | 3 | ZB1-1,6,9 |
| position 2 | 5.114 | 5 1.8/16 in | | |
| position 3 | 5.587 | 5 9.4/16 in | 1 | ZB3-1 |
| position 4 | 6.060 | 6 1.0/16 in | 1, 2 | ZB4-4, ZB1-4-6,8 |
| position 5 | 6.533 | 6 8.5/16 in | 1 | ZB5-1 |
| position 6 | 7.006 | 7 0.1/16 in | | |
fourth column is number (good, bad) in our stock,
not including the new ones from Soudan |
sCDMS Soudan Short: 4 8/16
sCDMS Soudan Medium: same as Position 3
sCDMS Soudan Long: 6 11/16
| 1510 | Inspect old tower for clues about thermal short. No problems seen. Compared stage-to-stage resistances between old and new tower. All similar except the old tower 4K-600mK resistance is open - on the new tower it's only 0.3 Ohm. |
| 1535 | Tried unsuccessfully to find a short on SQUET ZC-70 between pA QET/return and flyover cable. |
Next Day
