Wirebonding plan for S1502

Wiring Plan for detector and switchboards

Contact free bias is run through DIB1 QETA + QETA ret lines. A pair of bias resistors in series on the DIB 1 switchboard allows for the leakage current to be measured, similar to the way it is done with the HV board.

• The large bias resistor is 10.95 MΩ
• Leakage measurement resistor is 1.03 kΩ
• This gives the formula for the bias at detector as: V_det = V_set - 1.06E4*V_leak

The voltage across the crystal is not the same as that applied to the detector as a whole because there is a voltage drop across the vacuum gap. By treating the gap and crystal as parallel plate capacitors in series, one obtains.

• V_crystal = V_det/(1+ε_Si/ε_0 * d_gap/d_Si)
• ε_Si/ε_0=11.68 (Wikipedia), d_gap=0.037“±0.004” (2017/09/08), and d_Si=1“
• V_crystal = V_det*(0.70±0.03)

Ramo theory weighting potential maps