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2012/06/02

1040 Mixing chamber: 77.5 K; Begin pumping out exchange gas.
1047 Filled LN2 cold trap.
1525 Conduct electrical check at 77 K. No problems witnessed.
Start evacuating helium transfer stick jacket with dry pump.
Warm up leak checker. Twenty-five minutes after being turned on, leak checker records correct value for internal leak rate, therefore no need for recalibration.
Mixing chamber temperature is 77.5 K, and has been for the last few hours. One would expect the temperature to rise as exchange gas has been pumped out. Is this an indication of a leak? We'll know soon…
1635 Pump mixture into dump in preparation for throughput test.
1640 Helium background leak rate 3.4E-9 mbar l/s. Start blowing out nitrogen.
1730 Finished blowing nitrogen out of main bath. Helium leak rate 3.7E-9 mbar l/s: barely any change, so no indication of a leak.
1750 Pressure in main bath 0.14 mbar: all nitrogen has been blown out.
1800 Conduct throughput test: 31 mbar/min. Good enough. Background helium leak rate 5.9E-9 mbar l/s: no change, so no leak. Pump mixture into dump.
1821 Pumped and flushed main bath. Evacuated 1 K pot. Filled IVC with 0.1 mbar of He gas.
1835 Start helium transfer.
1955 Pump out helium exchange gas at mixing chamber temperature of 8 K.
2025 End LHe transfer (85.8%)
2100 Conduct electrical check. Everything looks good.
Detector: 51 pF Capacitor BH: Stripline: 19
SC: Flexible v4 300 K LN LHe
Face: 2 Date 2012-05-31 Date 2012-06-02 Date 2012-06-02
SQUET: ZC23 Who HC & RR Who HC Who HC & RR
Signal Pos. lead Gnd lead Nominal Actual Chassis Nominal Actual Chassis Nominal Actual Chassis
(Gnd lead) (Gnd lead) (Gnd lead)
Nominal: Nominal: Nominal:
< 0.1 nS < 0.1 nS < 0.1 nS
Charge
FET heater +/- 45 46 1.0 - 1.1 k 1.068 OK 1.0 - 1.1 k 1.044 OK 1.0 - 1.1 k 1.25 OK
Qi bias/QET Ret 15 24 - 26 nS <0.1 OK < 1 nS <0.1 OK <1 nS <0.1 OK
Qo bias/QET Ret 11 <0.2 OK <0.1 OK <1 nS <0.1 OK
Qi feedback/Drain/Source 50 16, 31 15 - 17 nS 12 OK 6 - 8 nS 10 OK <1 nS 9 OK
Qo feedback/Drain/Source 30 12, 27 11 OK 10 OK <1 nS 9 OK
Detector: 51 pF Capacitor BH: Stripline: 20
SC: ZB1-1-9 300 K LN LHe
Face: 5 Date 2012-05-31 Date 2012-06-02 Date 2012-06-02
SQUET: ZC70 Who HC & RR Who HC Who HC & RR
Signal Pos. lead Gnd lead Nominal Actual Chassis Nominal Actual Chassis Nominal Actual Chassis
(Gnd lead) (Gnd lead) (Gnd lead)
Nominal: Nominal: Nominal:
< 0.1 nS < 0.1 nS < 0.1 nS
Charge
FET heater +/- 45 46 1.0 - 1.1 k 1.06 OK 1.0 - 1.1 k 1.04 OK 1.0 - 1.1 k 1.16 OK
Qi bias/QET Ret 15 24 - 26 nS <0.1 OK < 1 nS <0.1 OK <1 nS <0.1 OK
Qo bias/QET Ret 11 <0.1 OK <0.1 OK <1 nS <0.1 OK
Qi feedback/Drain/Source 50 16, 31 15 - 17 nS 23 OK 6 - 8 nS 20 OK <1 nS 18 OK
Qo feedback/Drain/Source 30 12, 27 23 OK 20 OK <1 nS 19 OK
2200 Puzzled as to why temperature was rising even though IVC pressure was 4.6E-3 mbar. Firstly, IVC pressure shouldn't be that high. Secondly, if there is still exchange gas in the IVC, temperature should be lower. Discovered that mixing chamber heater was still on, full blast at 20 mW! Shut off heater, and temperature started to fall. IVC pressure is a bit of a mystery. Deal with it tomorrow.
Fill N2 cold trap full.