UMN CDMS Wiki archive
start › cdms › k100 › run_diary › 20111129

2011/11/29

930 IVC pressure: 2.5E-5 mbar l/s
940 Room background leak rate: 6.9E-9 mbar l/s; Hose background leak rate: 2.1E-8 mbar l/s ; IVC leak rate: 1.9E-8 mbar l/s. No leak found with spray test!
1515 Raised dewar.
1547 Electrical check at room temperature okay.
Cooldown checkout sheet (rev C SQUET)
Detector: G102 DIB1 BH:
SC: ZB1-4-8 300 K
Face: 2 Date 2011-11-29
SQUET: ZC23 Who RR
Signal Pos. lead Gnd lead Nominal Actual Chassis
(Gnd lead)
Nominal:
< 0.1 nS
Phonon
SQUID bias A/Ret 4 20 3 - 5 k 4.4 OK
SQUID bias B/Ret 19 34 5 OK
SQUID bias C/Ret 8 24 4.6 OK
SQUID bias D/Ret 23 39 4.3 OK
Feedback A/Ret 37 21 15 - 25 k 18 OK
Feedback B/Ret 2 18 20 OK
Feedback C/Ret 41 25 19 OK
Feedback D/Ret 22 6 18 OK
QET A/Ret 3 1, 13, 14, 17, 32 60 - 80 118 ,92, 87, 90, 88 OK
QET B/Ret 35 29, 33, 47, 48 87, 87, 91, 87 OK
QET C/Ret 7 5, 9, 10, 28 84,85,74,84 OK
QET D/Ret 38 36, 40, 43, 44 89,84,84,84 OK
Charge
FET heater +/- 45 46 1.0 - 1.1 k 1.068 OK
Qi bias/QET Ret B 15 24 - 26 nS 39 MOhm OK
Qo bias/QET Ret B 11 39 MOhm OK
Qi feedback/Drain/Source 50 16, 31 15 - 17 nS 44 MOhm OK
Qo feedback/Drain/Source 30 12, 27 44 MOhm OK
Qi drain 16 chassis < 0.1 nS – OK
Qo drain 12 chassis – OK
Qi source 31 chassis – OK
Qo source 27 chassis – OK
FET Tsense +/FET heater- 49 46 0.6 - 0.7 V 0.725 OK
LED 1 42 chassis 1.0 - 1.1 V 1.144 –
LED 2 26 chassis 1.128 –
Detector: G102 DIB2 BH:
SC: ZB1-4-6 300 K
Face: 5 Date 2011-11-29
SQUET: ZC70 Who RR
Signal Pos. lead Gnd lead Nominal Actual Chassis
(Gnd lead)
Nominal:
< 0.1 nS
SQUID bias A/Ret 4 20 3 - 5 k 4.8 OK
SQUID bias B/Ret 19 34 4.4 OK
SQUID bias C/Ret 8 24 4.6 OK
SQUID bias D/Ret 23 39 5.2 OK
Feedback A/Ret 37 21 15 - 25 k 29 OK
Feedback B/Ret 2 18 25 OK
Feedback C/Ret 41 25 28 OK
Feedback D/Ret 22 6 35 OK
QET A/Ret 3 1, 13, 14, 17, 32 60 - 80 115, 90, 82, 85, 82 OK
QET B/Ret 35 29, 33, 47, 48 78,78,82,78 OK
QET C/Ret 7 5, 9, 10, 28 76,76,69,76 OK
QET D/Ret 38 36, 40, 43, 44 83, 80, 80, 80 OK
FET heater +/- 45 46 1.0 - 1.1 k 1.06 OK
Qi bias/QET Ret 15 24 - 26 nS 40 MOhm OK
Qo bias/QET Ret 11 39 MOhm OK
Qi feedback/Drain/Source 50 16, 31 15 - 17 nS 43 MOhm OK
Qo feedback/Drain/Source 30 12, 27 43 MOhm OK
Qi drain 16 chassis < 0.1 nS – OK
Qo drain 12 chassis – OK
Qi source 31 chassis – OK
Qo source 27 chassis – OK
FET Tsense +/FET heater- 49 46 0.6 - 0.7 V open OK
LED 1 42 chassis 1.0 - 1.1 V 1.137 –
LED 2 26 chassis 1.127 –
1612 Pump main bath.
1657 Throughput tests: 1) 35 mbar/min 2) 44 mbar/min 3) 50 mbar/min
1726 Before filling dewar with He gas- room background leak rate: 1.6E-8 mbar l/s; Hose background leak rate: 2E-8 mbar l/s ; IVC leak rate: 6.5E-8 mbar l/s. Why is this so high? Background rate for room was higher.
1727 4th throughput test done to see if circulating mixture had an effect on leak rate. No noticeable change. Test #4: 37 mbar/min.
1730 Closed off all valves to IVC to see if leak rate changes. Leak rate dropped to 2.8E-8 mbar l/s.
1734 Opened smaller in-line valve. LR (leak rate) increased to: 3.3E-8 cc/s
Opened little valve connected to smaller in-line valve. LR: 4.6E-8 cc/s
Closed little valve. LR: 3.3E-8 cc/s
Closed both in-line valves. LR: 2.7E-8 cc/s
Opened larger in-line valve. LR increased dramatically to 1.1E-7 cc/s, and then decreased down to 5.6E-8 cc/s gradually.
Spray test around flanges at top of the fridge did not produce a significant increase in LR. LR stayed consistent around 5E-8 cc/s.
1800 Filled main bath with He gas. Leak check- LR: 5.2E-8 cc/s
Before disconnecting leak checker, hose LR: 9E-9 cc/s
1830 Pumping out N2 gas line for LN2 transfer.
2105 Filled IVC with 3.4 mbar of N2 gas. correction ⇒ Only line to IVC was filled with 3.4 mbar of N2 gas. IVC was closed off.
2120 Pump 1K pot. Pump mixture from fridge. Begin LN2 transfer.
2348 End LN2 transfer. Put on ping pong ball.