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2011/11/16

1410 Pump out exchange gas.
1430 IVC pressure 1.2E-6 mbar.
Conduct electrical checks at 77 K. Everything looks fine: Qi bias & Qo bias on DIB2 shorted to ground.
1515 Start blowing liquid nitrogen out of main bath.
1545 Interrupt cryocleaning and pump mixture into dump in preparation for throughput test.
1650 Liquid nitrogen is out of main bath.
Open gate valve and condenser line speedivalve. Conduct throughput test: 24 mbar/min. A little low. Pump mixture into dump and try again.
1705 Evacuate main bath.
Throughput test yields 28 mbar/min. Pretty good, and probably alright. To be on the safe side, we can cryoclean the mixture for another hour or so to ensure that it's clean. It'll also allow me to go for lunch. Pump mixture into dump.
Fill N2 cold trap full.
1725 Close gate valve and condenser line speedivalve. Start cryocleaning mixture through nitrogen cold trap 2. Open valve 6 to 13.9%.
IVC pressure is a very healthy 7.4E-7 mbar: fingers crossed, we have no leak. Pressure in main bath 0.04 mbar: no residual nitrogen left. Keep pumping on main bath as there is no harm in continuing to do so.
Out for lunch.
1755 Flow has stagnated. Open valve 6 to 14.1%.
1830 Interrupt cryocleaning in preparation for throughput test. Pump mixture into dump.
1855 Throughput test yields 30 mbar/min. Looks like mixture is clean. Pump mixture into dump.
1950 Flush main bath with He-4 gas.
Fill IVC with 0.1 mbar He-4 exchange gas.
Commence helium transfer.
2105 Pump out exchange gas at mixing chamber temperature 14 K.
2210 Conduct electrical check at 4.9 K. Everything looks fine: Qi bias & Qo bias on DIB2 shorted to ground.
Detector: G21A DIB1 BH: Stripline: 20
SC: ZB1-4-6 300 K 80K LHe
Face: 5 Date 2011-11-15 Date 2011-11-16 Date 2011-11-16
SQUET: ZC70 Who HC Who HC & RR Who HC & JZ
Signal Pos. lead Gnd lead Nominal Actual Chassis Nominal Actual Chassis Nominal Actual Chassis
(Gnd lead) (Gnd lead) (Gnd lead)
Nominal: Nominal: Nominal:
< 0.1 nS < 0.1 nS < 0.1 nS
Phonon
SQUID bias A/Ret 4 20 3 - 5 k 4.8 OK 1 - 2 k 1.9 OK 80 - 140 96 OK
SQUID bias B/Ret 19 34 4.4 OK 1.7 OK 80 - 140 102 OK
SQUID bias C/Ret 8 24 4.6 OK 1.8 OK 80 - 140 93 OK
SQUID bias D/Ret 23 39 5.2 OK 2.1 OK 80 - 140 92 OK
Feedback A/Ret 37 21 15 - 25 k 29 OK 9 - 13 k 15 OK 1.0 - 1.3 k 1.26 OK
Feedback B/Ret 2 18 25 OK 9 OK 1.0 - 1.3 k 1.26 OK
Feedback C/Ret 41 25 28 OK 14 OK 1.0 - 1.3 k 1.27 OK
Feedback D/Ret 22 6 34 OK 17 OK 1.0 - 1.3 k 1.25 OK
QET A/Ret 3 1, 13, 14, 17, 32 60 - 80 94,88,80,83,80 OK 30 - 40 57, 49, 44, 46, 44 OK 20 - 30 37,29,24,27,24 OK
QET B/Ret 35 29, 33, 47, 48 77,77,81,77 OK 38, 37, 41, 37 OK 20 - 30 24,23,27,23 OK
QET C/Ret 7 5, 9, 10, 28 76,76,69,76 OK 40, 40, 32, 39 OK 20 - 30 21,21,14,21 OK
QET D/Ret 38 36, 40, 43, 44 85,80,80,80 OK 47, 43, 42, 42 OK 20 - 30 28,23,22,23 OK
Charge
FET heater +/- 45 46 1.0 - 1.1 k 1.06 OK 1.0 - 1.1 k 1.04 OK 1.0 - 1.1 k 1.2 OK
Qi bias/QET Ret 15 24 - 26 nS Open OK < 1 nS Open OK <1 nS Open OK
Qo bias/QET Ret 11 Open OK Open OK <1 nS Open OK
Qi feedback/Drain/Source 50 16, 31 15 - 17 nS 43 MOhm OK 6 - 8 nS 49 MOhm OK <1 nS 55 MOhm OK
Qo feedback/Drain/Source 30 12, 27 43 MOhm OK 49 MOhm OK <1 nS 55 MOhm OK
Qi drain 16 chassis < 0.1 nS – OK < 0.1 nS – OK <0.1 nS – OK
Qo drain 12 chassis – OK – OK <0.1 nS – OK
Qi source 31 chassis – OK – OK <0.1 nS – OK
Qo source 27 chassis – OK – OK <0.1 nS – OK
FET Tsense +/FET heater- 49 46 0.6 - 0.7 V Open OK 0.9 - 1.0 V Open OK — OK
LED 1 chassis 42 1.0 - 1.1 V 1.132 – 1.2 - 1.5 V 1.497 – — –
LED 2 chassis 26 1.124 – 1.494 – — –
Detector: G21A DIB2 BH: Stripline: 19
SC: ZB1-4-8 300 K LN LHe
Face: 2 Date 2011-11-15 Date 2011-11-16 Date 2011-11-16
SQUET: ZC23 Who HC Who HC & RR Who HC & JZ
Signal Pos. lead Gnd lead Nominal Actual Chassis Nominal Actual Chassis Nominal Actual Chassis
(Gnd lead) (Gnd lead) (Gnd lead)
Nominal: Nominal: Nominal:
< 0.1 nS < 0.1 nS < 0.1 nS
Phonon
SQUID bias A/Ret 4 20 3 - 5 k 4.4 OK 1 - 2 k 1.6 OK 80 - 140 103 OK
SQUID bias B/Ret 19 34 5 OK 2 OK 80 - 140 91 OK
SQUID bias C/Ret 8 24 4.6 OK 1.7 OK 80 - 140 101 OK
SQUID bias D/Ret 23 39 4.3 OK 1.6 OK 80 - 140 91 OK
Feedback A/Ret 37 21 15 - 25 k 18 OK 9 - 13 k 7.3 OK 1.0 - 1.3 k 1.28 OK
Feedback B/Ret 2 18 20 OK 8.2 OK 1.0 - 1.3 k 1.28 OK
Feedback C/Ret 41 25 19 OK 7.6 OK 1.0 - 1.3 k 1.27 OK
Feedback D/Ret 22 6 18 OK 7 OK 1.0 - 1.3 k 1.26 OK
QET A/Ret 3 1, 13, 14, 17, 32 60 - 80 98,92,86,89,87 OK 30 - 40 58, 50, 45,48,46 OK 20 - 30 44,36,31,34,32 OK
QET B/Ret 35 29, 33, 47, 48 87,86,90,87 OK 45, 44, 48, 44 OK 20 - 30 30,30,33,30 OK
QET C/Ret 7 5, 9, 10, 28 84,84,74,84 OK 43, 43, 32, 42 OK 20 - 30 29,29,19,28 OK
QET D/Ret 38 36, 40, 43, 44 87,84,84,84 OK 48, 43, 43, 43 OK 20 - 30 34,29,28,29 OK
Charge
FET heater +/- 45 46 1.0 - 1.1 k 1.068 OK 1.0 - 1.1 k 1.04 OK 1.0 - 1.1 k 1.2 OK
Qi bias/QET Ret 15 24 - 26 nS Open 40 MOhm (Qi bias) < 1 nS Open 49 Mohm (QiBias) <1 nS Open 48 MOhm (Qi bias)
Qo bias/QET Ret 11 Open 39 MOhm (Qo bias) Open 39 Mohm (QoBias) <1 nS Open 40 MOhm (Qo bias)
Qi feedback/Drain/Source 50 16, 31 15 - 17 nS 44 MOhm OK 6 - 8 nS 50 MOhm OK <1 nS 55 MOhm OK
Qo feedback/Drain/Source 30 12, 27 44 MOhm OK 50 MOhm OK <1 nS 54 MOhm OK
Qi drain 16 chassis < 0.1 nS – OK < 0.1 nS – OK <0.1 nS – OK
Qo drain 12 chassis – OK – OK <0.1 nS – OK
Qi source 31 chassis – OK – OK <0.1 nS – OK
Qo source 27 chassis – OK – OK <0.1 nS – OK
FET Tsense +/FET heater- 49 46 0.6 - 0.7 V 0.727 OK 0.9 - 1.0 V 1.1 OK — OK
LED 1 chassis 42 1.0 - 1.1 V 1.134 – 1.2 - 1.5 V 1.5 – — –
LED 2 chassis 26 Open – Open – — –
2215 Close gate valve and condenser line speedivalve. Start cryocleaning mixture. Open valve 6 to 14.1%.
2315 Helium transfer completed. Helium liquid level 93.3%.
Mixing chamber temperature 4.9 K. IVC pressure 6.3E-7 mbar. Evacuate IVC overnight.
2330 Fill N2 cold trap full.